공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-12-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2008-06-30
LTD Date2008-12-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
onsemiNTD40N03RT4
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 7.8A Ta 32A Tc 32A 2.1W 3.5ns
InfineonIRLR8726TRPBF
MOSFET N-CH 30V 86A DPAK N-Channel 30 V 86A (Tc) 75W (Tc) Surface Mount TO-252AA (DPAK)
InfineonIRLR8729TRPBF
MOSFET N-CH 30V 58A DPAK N-Channel 30 V 58A (Tc) 55W (Tc) Surface Mount TO-252AA (DPAK)
InfineonIRLR8729TRLPBF
MOSFET N-CH 30V 58A D-PAK N-Channel 30 V 58A (Tc) 55W (Tc) Surface Mount TO-252AA (DPAK)
설명
유통업체에서 제공한 onsemi NTD70N03R에 대한 설명입니다.
Power MOSFET 25V 72A 8 mOhm Single N-Channel DPAK
MOSFETs- Power and Small Signal 25V 75A N-Channel No-Cancel/No-Return
Trans MOSFET N-CH 25V 32A 3-Pin(2+Tab) DPAK Tube
Power Field-Effect Transistor, 32A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
1.36W(Ta)，62.5W(Tc) 20V 2V@ 250µA 13.2nC@ 5 V 1individualNChannel 25V 8mΩ@ 20A,10V 72A 1.333nF@20V TO-252-3 SMD mount 6.73mm*6.22mm*2.38mm
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins4
Number of Terminals2
Technical
Continuous Drain Current (ID)32 A
Current Rating72 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vds)25 V
Element ConfigurationSingle
Fall Time1.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.333 nF
Max Operating Temperature150 °C
Max Power Dissipation1.56 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.87 W
Rds On Max8 mΩ
Rise Time1.3 ns
Turn-Off Delay Time18.4 ns
Voltage Rating (DC)25 V