가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLR8726TRPBF | 44,000 | 2K | 4d | ||||||||
| Newark | IRLR8726TRPBF | 4,004 | 1 | Cut Tape | ||||||||
| Future Electronics | IRLR8726TRPBF | 24,000 | 2K | Tape & Reel | ||||||||
| Arrow Electronics | IRLR8726TRPBF | 12 | 1 | |||||||||
| Rutronik | TMOSP12671 | 4,000 | 2K | 7h |
대체 부품
Price @ 1000
$ 0.236
$ 0.231
$ 0.231
Stock
1,714,113
406,302
406,302
Authorized Distributors
6
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
50 A
86 A
86 A
Threshold Voltage
-
-
-
Rds On Max
5.8 mΩ
5.8 mΩ
5.8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
75 W
75 W
75 W
Input Capacitance
2.15 nF
2.15 nF
2.15 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-16
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
onsemiNTD80N02T4
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 80A Tc 80A 75W 40ns
onsemiNTD85N02RT4
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 12A Ta 85A Tc 85A 2.4W 12ns
onsemiNTD110N02R
Tube Surface Mount N-Channel Single Mosfet Transistor 12.5A Ta 110A Tc 110A 2.88W 21ns
설명
유통업체에서 제공한 Infineon IRLR8726TRPBF에 대한 설명입니다.
Single N-Channel 30 V 5.8 mOhm 23 nC HEXFET® Power Mosfet - TO-252-3
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 30 V, 86 A, 0.004 ohm, TO-252AA, Surface Mount
N CH POWER MOSFET, HEXFET, 30A, 86A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:86A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 86 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 5.8 / Gate-Source Voltage V = 20 / Fall Time ns = 16 / Rise Time ns = 49 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 75
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.8 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance5.8 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation75 W
Rds On Max5.8 mΩ
Rise Time49 ns
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time12 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm