공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2008-06-30
LTD Date2008-12-31
관련 부품
onsemiNTD60N02RT4
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 8.5A Ta 32A Tc 32A 1.87W 33ns
onsemiNTD65N03RG
Tube Surface Mount N-Channel Single Mosfet Transistor 9.5A Ta 32A Tc 32A 50W 20.3ns
InfineonIPD090N03LGBTMA1
MOSFET N-CH 30V 40A TO252-3 N-Channel 30 V 40A (Tc) 42W (Tc) Surface Mount PG-TO252-3
InfineonIPD30N03S2L10ATMA1
MOSFET N-CH 30V 30A TO252-3 N-Channel 30 V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11
InfineonIPD105N03LGATMA1
MOSFET N-CH 30V 35A TO252-3 N-Channel 30 V 35A (Tc) 38W (Tc) Surface Mount PG-TO252-3-11
설명
유통업체에서 제공한 onsemi NTD70N03RG에 대한 설명입니다.
Tube Surface Mount N-Channel Single Mosfet Transistor 10A Ta 32A Tc 32A 1.87W 1.3ns
Trans MOSFET N-CH 25V 32A 3-Pin(2+Tab) DPAK Rail
Power Field-Effect Transistor, 32A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs- Power and Small Signal 25V 75A N-Channel
1.36W(Ta)，62.5W(Tc) 20V 2V@ 250µA 13.2nC@ 5 V 1individualNChannel 25V 8mΩ@ 20A,10V 72A 1.333nF@20V TO-252-3 SMD mount 6.73mm*6.22mm*2.38mm
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
Contact PlatingTin
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)32 A
Current Rating72 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time1.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.333 nF
Max Operating Temperature150 °C
Max Power Dissipation1.56 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.87 W
Rds On Max8 mΩ
Rise Time1.3 ns
Turn-Off Delay Time18.4 ns
Voltage Rating (DC)25 V