대체 부품
Price @ 1000
$ 0.065
$ 0.042
$ 0.042
Stock
2,463,129
50,163,242
50,163,242
Authorized Distributors
5
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
160 V
160 V
160 V
Max Collector Current
600 mA
60 mA
60 mA
Transition Frequency
100 MHz
-
-
Collector Emitter Saturation Voltage
200 mV
200 mV
200 mV
hFE Min
30
30
30
Power Dissipation
350 mW
225 mW
225 mW
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1989-01-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2018-06-22
LTD Date2018-12-22
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
관련 부품
Diodes Inc.MMBT5551-7-F
MMBT5551 Series NPN 160 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3
설명
유통업체에서 제공한 onsemi MMBT5551에 대한 설명입니다.
600 mA, 160 V NPN General Purpose Bipolar Junction Transistor Legacy Fairchild Part number
Trans General Purpose BJT NPN 160 Volt 0.6A 3-Pin SOT-23 Tape and Reel
Trans GP BJT NPN 160V 0.6A 350mW 3-Pin SOT-23 T/R / TRANS NPN 160V 0.6A SOT-23
MMBT5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - SOT-23
NPN GENERAL PURPOSE AMPLIFIER Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):80; Package/Case:SOT-323; C-E Breakdown Voltage:160V; DC Collector Current:0.6A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR,NPN,160V,0.6A,SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:350mW; DC Collector Current:600mA; DC Current Gain hFE:250; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:600mA; Current Ic hFE:250mA; DC Current Gain Max (hfe):250; Gain Bandwidth ft Typ:300MHz; Hfe Min:80; Noise Figure Typ:8dB; Package / Case:SOT23; Power Dissipation Ptot Max:350mW; RF Transistor Case:SOT-23; Termination Type:SMD; Test Frequency:15.7kHz
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)180 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)160 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product100 MHz
hFE Min30
Max Breakdown Voltage160 V
Max Collector Current600 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
Transition Frequency100 MHz
Voltage Rating (DC)160 V
Dimensions
Height1.2 mm
Length2.92 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책