가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | MMBT5551LT1G | 17,271,000 | 3K | Tape & Reel | ||||||||
| Avnet | MMBT5551LT1G | 126,000 | 3K | 2d | ||||||||
| Newark | MMBT5551LT1G | 188,180 | 1 | Cut Tape | ||||||||
| Arrow Electronics | MMBT5551LT1G | 11,650 | 1 | |||||||||
| Verical | MMBT5551LT1G | 1,095,000 | 3K |
대체 부품
Price @ 1000
$ 0.04
$ 0.06
$ 0.06
Stock
90,737,383
9,881,049
9,881,049
Authorized Distributors
6
6
6
Mount
-
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23
SOT-23
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
160 V
160 V
160 V
Max Collector Current
60 mA
200 mA
200 mA
Transition Frequency
-
100 MHz
100 MHz
Collector Emitter Saturation Voltage
200 mV
200 mV
200 mV
hFE Min
30
30
30
Power Dissipation
225 mW
300 mW
300 mW
공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiMMBT5550LT1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 140 V, 600 mA, 225 mW, SOT-23, Surface Mount
onsemiMMBT5550LT3G
Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
onsemiMMBT5550LT1
Cut Tape (CT) Single 3 Contains Lead Bipolar (BJT) Transistor 600mA 225mW 180V 150C
설명
유통업체에서 제공한 onsemi MMBT5551LT1G에 대한 설명입니다.
Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 600 mA, 225 mW, SOT-23, Surface Mount
160V 225mW 600mA NPN SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
ON SEMI MMBT5551LT1G NPN BIPOLAR TRANSISTOR, 0.06 A, 160 V, 3-PIN SOT-23
NPN transistor, 160V, 600mA, SOT-23, used for high-voltage switching and amplification
Bipolar Transistors (BJT); MMBT5551LT1G; ON SEMICONDUCTOR; NPN; 3; 160 V; 600 mA
Small Signal Bipolar Transistor, 0.06A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor GP BJT NPN 160V 0.06A 3-Pin SOT-23 T/R
Avnet Japan
High Voltage NPN Bipolar Transistor
ON Semiconductor MMBT5551LT1G Transistor Tape on Full reel For high voltage
60 mA 160 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
TRANSISTOR, NPN, 160V, 600MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: -; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 30hFE; Tran
Bjt, Npn, 160V, Sot-23, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:160V; Continuous Collector Current:60Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Onsemi MMBT5551LT1G.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)180 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)160 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
hFE Min30
Max Breakdown Voltage160 V
Max Collector Current60 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation225 mW
Schedule B8541210080
Voltage Rating (DC)160 V
Dimensions
Height1.11 mm
Length2.9 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책