공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-02-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.MMBT5551-7-F
MMBT5551 Series NPN 160 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3
설명
유통업체에서 제공한 Diodes Inc. BCX41TA에 대한 설명입니다.
Bipolar Transistors - BJT General Purpose Transistor SOT23 T&R 3K
BCX41 Series 125 V 800 mA NPN SMT Medium Power Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.8A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
Transistor, Npn, 125V, 0.8A, Sot-23 Rohs Compliant: Yes |Diodes Inc. BCX41TA
Trans GP BJT NPN 125V 0.8A 330mW 3-Pin SOT-23 T/R
900mV@ 30mA,300mA NPN 330mW 5V 100nA 125V 125V 800mA SOT-23-3 3mm*1.4mm*1.1mm
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Collector Emitter Breakdown Voltage125 V
Collector Emitter Saturation Voltage900 mV
Collector Emitter Voltage (VCEO)125 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min25
Max Breakdown Voltage125 V
Max Collector Current800 mA
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
PolarityNPN
Power Dissipation330 mW
Schedule B8541210080
Transition Frequency100 MHz
Dimensions
Height1.1 mm
Length3 mm
Width1.4 mm