onsemi HUF75345S3ST

Transistor, Mosfet, N-channel, 55V V(br)dss, 75A I(d), TO-263AB
$ 3.462
Production

가격 및 재고

데이터시트 및 문서

onsemi HUF75345S3ST에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

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Technical Drawing1 페이지5년 전

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재고 내역

3개월간의 트렌드:
-3.10%

CAD 모델

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대체 부품

Price @ 1000
$ 3.462
$ 1.53
Stock
97,913
19,489
Authorized Distributors
6
1
Mount
Surface Mount
-
Case/Package
TO-263-3
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
-
-
Rds On Max
7 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
325 W
-
Input Capacitance
4 nF
-

공급망

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

관련 부품

InfineonIPB065N06LG
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) TO-263
Trans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
PWR MOS ULTRAFET 55V/75A/0.008 OHM N-CHANNEL TO-263AB T&R
55V, N-Ch, 8 mΩ max, Automotive MOSFET, D2PAK, SIPMOS™, PG-TO263-3, RoHS
PWR MOS ULTRAFET 55V/75A/0.008 OHM N-CHANNEL TO-263AB
75 A 55 V 0.008 ohm N-CHANNEL Si POWER MOSFET TO-263AB

설명

유통업체에서 제공한 onsemi HUF75345S3ST에 대한 설명입니다.

TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,75A I(D),TO-263AB
N-Channel 55 V 0.007 Ohm Surface Mount UltraFET Power Mosfet - TO-263AB
N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ
325W(Tc) 20V 4V@ 250¦ÌA 275nC@ 20 V 1N 55V 7m¦¸@ 75A,10V 75A 4nF@25V D2PAK,TO-263 5.08mm
Trans MOSFET N-CH 55V 75A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

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