가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | HUFA75344S3S | 1,600 | 253 | |||||||||
| Rochester Electronics | HUFA75344S3S | 1,880 | 18h | |||||||||
| Microchip USA | HUFA75344S3S | 304 | 300 | Tube | 11h | |||||||
| Worldway Electronics | HUFA75344S3S | 27,980 | 7 | Tube | 18h | |||||||
| Klychip | HUFA75344S3S | 문의하기 | 1 | >1wk |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-12-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
onsemiHUF75345S3S
75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 75A D2PAK
InfineonSPB80N06S08ATMA1
55V, N-Ch, 8 mΩ max, Automotive MOSFET, D2PAK, SIPMOS™, PG-TO263-3, RoHS
InfineonIRF1010ZSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 5.8Milliohms;ID 75A;D2Pak;PD 140W;VGS +/-20
설명
유통업체에서 제공한 onsemi HUFA75344S3S에 대한 설명입니다.
PWR MOS ULTRAFET 55V/75A/0.008 OHM N-CHANNEL TO-263AB
MOSFET N-CH 55V 75A D2PAK
MOSFETs 75a,55V,0.008Ohm,NCh UltraFET
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Field Effect Tube (MOSFET)
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation285 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation285 W
Rds On Max8 mΩ
Rise Time125 ns
Turn-Off Delay Time46 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)55 V
Dimensions
Height5.08 mm