관련 부품
InfineonIPB80N06S405ATMA2
60V, N-Ch, 5.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
InfineonIPB80N06S407ATMA2
60V, N-Ch, 7.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
설명
유통업체에서 제공한 Infineon IPB065N06LG에 대한 설명입니다.
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) TO-263
IPB065N06 OPTLMOS N-CHANNEL POWER MOSFET;
MOSFET N-CH 60V 80A TO263-3
Power Field-Effect Transistor, 80A I(D), 60V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance6.2 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.1 nF
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation250 W
Rds On Max6.2 mΩ
Rise Time21 ns
Turn-Off Delay Time60 ns
Voltage Rating (DC)60 V