가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | HGTG5N120BND | 412 | 210 | |||||||||
| Rochester Electronics | HGTG5N120BND | 412 | 10h | |||||||||
| Farnell | HGTG5N120BND | 0 | 300 | 10h | ||||||||
| Microchip USA | HGTG5N120BND | 117 | 150 | Tray | 5h | |||||||
| Component Stockers USA | HGTG5N120BND | 5,447 | 2d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2003-04-16
LTD Date2003-12-31
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
관련 부품
onsemiHGTG11N120CND
Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247
설명
유통업체에서 제공한 onsemi HGTG5N120BND에 대한 설명입니다.
167W 21A 1.2kV NPT (non-penetrating type) TO-247-3 IGBT Transistors / Modules ROHS
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
IGBT, 1200V, 21A; DC Collector Current: 21A; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operati
HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.45 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current21 A
Current Rating21 A
Element ConfigurationSingle
Fall Time200 ns
Max Breakdown Voltage600 V
Max Collector Current21 A
Max Operating Temperature150 °C
Max Power Dissipation167 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation167 W
Reverse Recovery Time65 ns
Rise Time20 ns
Schedule B8541290080
Voltage Rating (DC)1.2 kV
Dimensions
Height20.82 mm
Length15.87 mm
Width4.82 mm