onsemi NGTB15N120IHWG

Igbt Single Transistor, 30 A, 2.1 V, 278 W, 1.2 Kv, To-247, 3
$ 2.27
Obsolete

가격 및 재고

데이터시트 및 문서

onsemi NGTB15N120IHWG에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet10 페이지11년 전

element14 APAC

재고 내역

3개월간의 트렌드:
+0.00%

공급망

Country of OriginVietnam
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-09-22
Lifecycle StatusObsolete (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

관련 부품

167W 21A 1.2kV NPT (non-penetrating type) TO-247-3 IGBT Transistors / Modules ROHS
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247
Compliant Through Hole Lead Free TO-247 Halogen Free Production (Last Updated: 2 years ago) 240
Trans IGBT Chip N-CH 1200V 40A 310000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 60A 349000mW 3-Pin(3+Tab) TO-247 Tube, PG-TO247-3, RoHS

설명

유통업체에서 제공한 onsemi NGTB15N120IHWG에 대한 설명입니다.

Igbt Single Transistor, 30 A, 2.1 V, 278 W, 1.2 Kv, To-247, 3
IGBT 15A 1200V TO-247 / Trans IGBT Chip N-CH 1200V 30A 278000mW 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247
IGBT, SINGLE, 1.2KV, 30A, TO-247-3
278W 2.1V 2.45V@ 15V,15A 30A TO-247-3 16.25mm*5.3mm*21.4mm
IGBT, SINGLE, 1.2KV, 30A, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 278W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of P

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