공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-12-05
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
onsemiNGTB25N120SWG
Igbt Single Transistor, 50 A, 2 V, 385 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes
onsemiHGTG11N120CND
Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247
InfineonIHW30N120R3FKSA1
Trans IGBT Chip N-CH 1200V 60A 349000mW 3-Pin(3+Tab) TO-247 Tube, PG-TO247-3, RoHS
InfineonIHW30N135R3FKSA1
Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247
InfineonIHW30N110R3FKSA1
1100 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
설명
유통업체에서 제공한 STMicroelectronics STGW30NC120HD에 대한 설명입니다.
N-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247
Trans IGBT Chip N-CH 1200V 60A 220W 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247
STGW30NC120HD, IGBT TRANSISTOR, 60 A 1200 V, 1MHZ, 3-PIN TO-247
STMICROELECTRONICS STGW30NC120HD IGBT Single Transistor, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins
Trench gate field-stop IGBT, TO-247, Tube
STMicroelectronics SCT
60 A 1200 V N-CHANNEL IGBT TO-247
IGBT, N 1200V 30A TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.75V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Collector Base Breakdown Voltage (VCES)1.2 kV
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.2 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current30 A
Current Rating30 A
Element ConfigurationSingle
Forward Current30 A
Forward Voltage1.9 V
Max Collector Current60 A
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation220 W
Reverse Recovery Time152 ns
Rise Time11 ns
Turn-Off Delay Time275 ns
Turn-On Delay Time29 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm