Infineon IKW08T120FKSA1

Name: Infineon IKW08T120FKSA1
Brand: Infineon
SKU: IKW08T120FKSA1

Infineon IKW08T120FKSA1 IGBT, 16 A 1200 V, 3-Pin TO-247, Through Hole

$ 1.845

Obsolete

제조업체 페이지 데이터시트

가격 및 재고

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비공인 딜러

모든 가격 할인 보기

Distributor		SKU		Min	Pkg
Arrow Electronics		IKW08T120FKSA1	230	1		1.610	1.610	1.610	1.610	1.610
Rochester Electronics		IKW08T120FKSA1	19,455								21h
Farnell		IKW08T120FKSA1	0	1		4.150*	2.933*	2.230*	2.230*	2.230*	21h
Mouser	2	726-IKW08T120	492	1	Tube	4.570	3.050	2.350	2.080	1.850
Verical	2	IKW08T120FKSA1	230	1		1.610	1.610	1.610	1.610	1.610

재고 내역

3개월 추세: -0.27%

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

대체 부품

0개의 부품을 구매할 수 있습니다

데이터시트 및 문서

Infineon IKW08T120FKSA1에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet16 페이지12년 전

element14 APAC

_legacy Avnet

Farnell

재고 내역

3개월간의 트렌드:

-0.27%

CAD 모델

신뢰할 수 있는 파트너로부터 Infineon IKW08T120FKSA1 심벌, 풋프린트 및 3D STEP 모델을 다운로드하세요.

소스	이캐드	엠캐드	파일
EE Concierge	심벌풋프린트
SnapEDA	풋프린트	3D	다운로드

캐드 모델 다운로드 시 새 탭으로 파트너 사이트가 열립니다.

Octopart의 CAD를 다운로드함으로써 , Octopart의 이용약관 및 개인정보 보호정책에 동의하는 것으로 간주됩니다.

공급망

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-03-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-08-15

LTD Date2025-02-15

설명

유통업체에서 제공한 Infineon IKW08T120FKSA1에 대한 설명입니다.

Infineon IKW08T120FKSA1 IGBT, 16 A 1200 V, 3-Pin TO-247, Through Hole

TodayComponents

IGBT, N, 1200V, 8A, TO-247; Transistor Type:IGBT; DC Collector Current:16A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:8A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:70W; Power Dissipation Pd:70W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

element14 APAC

The 1200 V, 8 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS

Infineon SCT

Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.7 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 70 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

Distrelec

Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

Infineon