onsemi HGTG20N60B3

HGTG20N60B3 Series 600 V 40 A Flange Mount UFS N-Channel IGBT-TO-247

40A, 600V, UFS Series N-Channel IGBTs | IGBT 600V 40A 165W TO247

Trans IGBT Chip N-CH 600V 40A 165W 3-Pin(3+Tab) TO-247 Tube

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247

Igbt Single Transistor, 40 A, 2 V, 165 W, 600 V, To-247, 3 Rohs Compliant: Yes |Onsemi HGTG20N60B3..

PWR IGBT UFS 20A 600V TF<200NS N-CH TO-247

IGBT UFS N-CHAN 600V 40A TO-247

IGBT,N CH,600V,40A,TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 165W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O

165W 1.8V 600V 40A TO-247-3 15.87mm*20.82mm*4.82mm

The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.