공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-09-14
Lifecycle StatusProduction (Last Updated: 6 months ago)
관련 부품
onsemiHGTG12N60A4D
600V SMPS Series N-Channel IGBT Transistor with Anti-Parallel Hyperfast Diode
onsemiFGH40N60SFDTU
IGBT 600V 80A 290W TO247 / Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube
설명
유통업체에서 제공한 STMicroelectronics STGWA19NC60HD에 대한 설명입니다.
STGWA19NC60HD Series 600 V 52 A Very Fast IGBT with Ultrafast Diode - TO-247
Trans IGBT Chip N-CH 600V 52A 208000mW 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247
Discrete IGBTs; STGWA19NC60HD; STMICROELECTRONICS; 52 A; 600 V; 208 W
208W 2V Freestanding 600V 52A TO-247 Through hole mounting
Igbt |Stmicroelectronics STGWA19NC60HD
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Weight6.500007 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current52 A
Element ConfigurationSingle
Max Collector Current52 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation208 W
Reverse Recovery Time31 ns
Turn-Off Delay Time97 ns
Turn-On Delay Time25 ns
Dimensions
Height25.54 mm