유통업체에서 제공한 STMicroelectronics STGW20H60DF에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-247 Tube
600 V, 20 A high speed trench gate field-stop IGBT
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
STMicroelectronics IGBT, maximum 600 V, maximum 40 A
STGW20H60DF, IGBT TRANSISTOR, 40 A 600 V, 3-PIN TO-247
IGBT N-Ch 600V 20A High-Speed TO247
RS APAC
晶体管, IGBT, 600V, 40A, 175度 C, 167W;
IGBT, 600V, 40A, 175DEG C, 167W;
IGBT TRENCH FS 600V 40A TO-247
TO247 IGBT 20A 600V TRENCH GAT
IGBT, SINGLE, 600V, 40A, TO-247; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:167W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes