공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-16
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
관련 부품
onsemiFQU2N60CTU
Transistor: N-MOSFET; unipolar; 600V; 1.9A; 4.7ohm; 2.5W; -55+150 deg.C; THT; IPAK
STMicroelectronicsSTD3NK50Z-1
STMICROELECTRONICS STD3NK50Z-1 MOSFET Transistor, N Channel, 1.15 A, 500 V, 2.8 ohm, 10 V, 3.75 V
설명
유통업체에서 제공한 onsemi FQU2N60TU에 대한 설명입니다.
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Rail
Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
2.5W(Ta)£¬45W(Tc) 5V@ 250¦ÌA 11nC@ 10V 1individualNChannel 600V 4.7¦¸@ 1A,10V 350pF@25V IPAK Through hole mounting
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance4.7 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max4.7 Ω
Rise Time25 ns
Turn-Off Delay Time20 ns
Voltage Rating (DC)600 V