공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-07-12
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
관련 부품
InfineonIPU50R3K0CEBKMA1
18W(Tc) 20V 3.5V@ 30¦ÌA 4.3nC@ 10 V 1N 500V 3¦¸@ 400mA,13V 1.7A 84pF@100V IPAK,TO-251
설명
유통업체에서 제공한 STMicroelectronics STD3NK50Z-1에 대한 설명입니다.
STMICROELECTRONICS STD3NK50Z-1 MOSFET Transistor, N Channel, 1.15 A, 500 V, 2.8 ohm, 10 V, 3.75 V
N-channel 500 V, 2.8 Ohm typ., 2.3 A SuperMESH Power MOSFET in an IPAK package
Ciiva
Power MOSFET, N Channel, 500 V, 1.15 A, 2.8 ohm, TO-251AA, Through Hole
Power Field-Effect Transistor, 2.3A I(D), 500V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N CH, 500V, 2.3A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.15A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:45W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:2.3A; Package / Case:IPAK; Power Dissipation Pd:45W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
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기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.3 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance3.3 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance280 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3.75 V
Number of Elements1
Power Dissipation45 W
Rds On Max3.3 Ω
Rise Time13 ns
Threshold Voltage3.75 V
Turn-Off Delay Time24 ns
Turn-On Delay Time8 ns