공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTU3LN62K3
N-channel 620 V, 2.5 Ω , 2.5 A SuperMESH3™ Power MOSFET DPAK, TO-220FP, TO-220, IPAK
STMicroelectronicsSTD3NK50Z-1
STMICROELECTRONICS STD3NK50Z-1 MOSFET Transistor, N Channel, 1.15 A, 500 V, 2.8 ohm, 10 V, 3.75 V
설명
유통업체에서 제공한 STMicroelectronics STD3NK60Z-1에 대한 설명입니다.
Transistor MOSFET N-CH 600V 2.4A 3-Pin (3+Tab) IPAK Tube
STMICROELECTRONICS STD3NK60Z-1 Power MOSFET, N Channel, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
N-CHANNEL 600V - 3.3 Ohm - 2.4A IPAK Zener-Protected SuperMESH™ PowerMOSFET
STD3NK60Z-1 N-channel MOSFET Transistor, 2.4 A, 600 V, 3-Pin IPAK
N-CHANNEL 600 V-3.3 OHM-2.4 A IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N I-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 3.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.4 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance3.6 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance311 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation45 W
Rds On Max3.6 Ω
Rise Time14 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time19 ns
Turn-On Delay Time9 ns
Dimensions
Height6.2 mm
Length6.6 mm
Width2.4 mm