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onsemi FDP6035AL

Power Field-Effect Transistor, 48A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-220AB
Production

가격 및 재고

데이터시트 및 문서

onsemi FDP6035AL에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

Upverter

Technical Drawing1 페이지7년 전

IHS

Farnell

Mouser

공급망

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-07-01
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
LTB Date2008-12-02
LTD Date2009-06-02

관련 부품

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Single N-Channel 30 V 8.7 mOhm 13 nC HEXFET® Power Mosfet - TO-220-3
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N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ
InfineonIRF3707ZPBF
MOSFET, N Ch., 30V, 59A, 9.5 MOHM, 9.7 NC QG, TO-220AB, Pb-Free
onsemiFDP8880
N-Channel 30 V 11.6 mOhm PowerTrench Mosfet - TO-220AB-3
onsemiNTP65N02R
Tube Through Hole N-Channel Single Mosfet Transistor 7.6A Ta 58A Tc 58A 62.5W 10ns
InfineonIRF3708PBF
Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) | MOSFET N-CH 30V 62A TO-220AB

설명

유통업체에서 제공한 onsemi FDP6035AL에 대한 설명입니다.

Power Field-Effect Transistor, 48A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-220AB
N-Channel Logic Level PowerTrench MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:48A; On Resistance, Rds(on):0.0125ohm; Rds(on) Test Voltage, Vgs:10V; Drain-Source Breakdown Voltage:-100V RoHS Compliant: Yes
MOSFET, N, LOGIC, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:48A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:TO-220; Termination Type:Through Hole; Current, Idm Pulse:180A; No. of Pins:3; Power Dissipation:58W; Power, Pd:52W; SMD Marking:FDP6035AL; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V

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  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
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