가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NTP65N02R | 13,300 | 1521 | |||||||||
| Rochester Electronics | NTP65N02R | 16,392 | 13h | |||||||||
| Microchip USA | NTP65N02R | 235 | 3K | Tray | 6h | |||||||
| Win Source | WS-NTP65N02R | 8,000 | 125 | 14h | ||||||||
| Worldway Electronics | NTP65N02R | 25,615 | 7 | Tube | 13h |
대체 부품
이 부품
대체 부품
Price @ 1000
$ 0.197
$ 0.444
Stock
773,980
725,010
Authorized Distributors
2
2
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
25 V
25 V
Continuous Drain Current (ID)
7.6 A
7.6 A
Threshold Voltage
-
-
Rds On Max
10.5 mΩ
10.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
62.5 W
62.5 W
Input Capacitance
1.33 nF
1.33 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-10-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
설명
유통업체에서 제공한 onsemi NTP65N02R에 대한 설명입니다.
Tube Through Hole N-Channel Single Mosfet Transistor 7.6A Ta 58A Tc 58A 62.5W 10ns
Trans MOSFET N-CH 25V 65A 3-Pin(3+Tab) TO-220AB Rail
MOSFETs- Power and Small Signal 24V 65A N-Channel No-Cancel/No-Return
MOSFET N-CH 25V 7.6A/58A TO220AB
Power Field-Effect Transistor, 7.6A I(D), 25V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)7.6 A
Current Rating65 A
Drain to Source Breakdown Voltage24 V
Drain to Source Resistance10.5 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.33 nF
Max Operating Temperature150 °C
Max Power Dissipation78 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation62.5 W
Rds On Max10.5 mΩ
Rise Time53 ns
Turn-Off Delay Time14 ns
Voltage Rating (DC)24 V