Infineon IRF3708PBF

Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) | MOSFET N-CH 30V 62A TO-220AB

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Single N-Channel 30 V 29 mOhm 24 nC HEXFET® Power Mosfet - TO-220-3

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 87 W

Trans MOSFET N-CH 30V 62A 3-Pin(3+Tab) TO-220AB

MOSFET, 30V, 62A, 12 MOHM, 24 NC QG, TO-220AB

HEXFET POWER MOSFET Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

MOSFET, N, 30V, 62A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:87W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:62A; Junction to Case Thermal Resistance A:1.73°C/W; Package / Case:TO-220AB; Power Dissipation Pd:87W; Power Dissipation Pd:87W; Pulse Current Idm:248A; Termination Type:Through Hole; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V