공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-07-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
관련 부품
설명
유통업체에서 제공한 onsemi FDP7030BL에 대한 설명입니다.
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ
Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) TO-220AB Tube
N-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, LOGIC, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Diss
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)60 A
Current Rating60 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.76 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation65 W
Min Breakdown Voltage30 V
Min Operating Temperature-65 °C
Nominal Vgs1.9 V
Number of Channels1
Number of Elements1
Power Dissipation60 W
Rds On Max9 mΩ
Resistance9 MΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1.9 V
Turn-Off Delay Time30 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)30 V
Dimensions
Height20.4 mm
Length10.67 mm
Width4.83 mm