가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | FDMC86160ET100 | 70 | 1 | Cut Tape | ||||||||
| DigiKey | FDMC86160ET100CT-ND | 173 | 1 | Cut Tape | ||||||||
| Onlinecomponents.com | FDMC86160ET100 | 0 | 25 | Bulk | ||||||||
| Master Electronics | FDMC86160ET100 | 0 | 25 | |||||||||
| Future Electronics | FDMC86160ET100 | 0 | 3K | Tape & Reel |
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-01-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
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N-channel 100 V, 0.013 Ohm typ., 45 A STripFET F7 Power MOSFET in DPAK package
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InfineonBSC117N08NS5ATMA1
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onsemiNTMFS6B14NT1G
ON SEMICONDUCTOR NTMFS6B14NT1G MOSFET Transistor, N Channel, 50 A, 100 V, 0.0122 ohm, 10 V, 4 V
STMicroelectronicsSTL60N10F7
N-channel 100 V, 0.013 Ohm typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
설명
유통업체에서 제공한 onsemi FDMC86160ET100에 대한 설명입니다.
PT5 100/20V Nch Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 43A, 14mΩ
Power Field-Effect Transistor, 9A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
MOSFET, N-CH, 43A, 100V, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 43A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0112ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.9V; Pow
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ulta low RDS(on) is required in small spaces such as High performance VRM, POL and orring functions.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight152.7 mg
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time3.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.29 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation2.8 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.8 W
Rds On Max14 mΩ
Rise Time3.6 ns
Turn-Off Delay Time16 ns
Turn-On Delay Time9.7 ns
Dimensions
Height800 µm