가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | NTMFS6B14NT1G | 38,261 | 7h | |||||||||
| RS (Formerly Allied Electronics) | NTMFS6B14NT1G | 0 | 5 | Bulk | 1d | |||||||
| Farnell | NTMFS6B14NT1G | 0 | 1 | Cut Tape | 1d | |||||||
| Win Source | WS-NTMFS6B14NT1G | 25,000 | 60 | 8h | ||||||||
| Worldway Electronics | NTMFS6B14NT1G | 16,023 | 7 | Tape & Reel | 7h |
공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-18
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-07-05
LTD Date2022-07-05
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
관련 부품
Diodes Inc.DMN4020LFDE-7
Mosfet, N-Ch, 40V, 8A, U-Dfn2020 Rohs Compliant: Yes |Diodes Inc. DMN4020LFDE-7
설명
유통업체에서 제공한 onsemi NTMFS6B14NT1G에 대한 설명입니다.
ON SEMICONDUCTOR NTMFS6B14NT1G MOSFET Transistor, N Channel, 50 A, 100 V, 0.0122 ohm, 10 V, 4 V
Single N−Channel Power MOSFET 100V, 50A, 14mΩ
Nfet So8Fl 100V 15A 14Moh Rohs Compliant: Yes
Trans MOSFET N-CH 100V 10A 5-Pin(4+Tab) SO-FL T/R
Power Field-Effect Transistor, 10A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CHANNEL MOSFET, 100V, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageDFN
MountSurface Mount
Number of Terminals5
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time6.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation77 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max15 mΩ
Rise Time39 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time17 ns
Turn-On Delay Time9.6 ns
Dimensions
Height1.1 mm
Length6.1 mm
Width5.1 mm