공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-05-23
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
onsemiNTMFS6B14NT1G
ON SEMICONDUCTOR NTMFS6B14NT1G MOSFET Transistor, N Channel, 50 A, 100 V, 0.0122 ohm, 10 V, 4 V
STMicroelectronicsSTD45N10F7
N-channel 100 V, 0.013 Ohm typ., 45 A STripFET F7 Power MOSFET in DPAK package
InfineonIRFR4510TRPBF
TRANSISTOR, HEXFET POWER MOSFET, N-CHANNEL, 100V , 63A, 13.9MOHM MAX, D-PAK
InfineonIRFH5210TRPBF
INFINEON IRFH5210TRPBF MOSFET Transistor, N Channel, 55 A, 100 V, 0.0126 ohm, 10 V, 4 VNew
InfineonIRF3710ZSTRLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;D2Pak;PD 160W;VGS +/-20
설명
유통업체에서 제공한 STMicroelectronics STL60N10F7에 대한 설명입니다.
N-channel 100 V, 0.013 Ohm typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
STL60N10F7 N-CHANNEL MOSFET TRANSISTOR, 60 A, 100 V, 8-PIN POWERFLAT
Power MOSFET, N Channel, 100 V, 46 A, 0.0145 ohm, PowerFLAT, Surface Mount
MOSFET, N-CH, 100V, 46A, 175DEG C, 72W; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0145ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 72W; Transistor Case Style: PowerFLAT; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: STripFET DeepGATE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)46 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.64 nF
Max Operating Temperature175 °C
Max Power Dissipation72 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Rds On Max16.5 mΩ
Resistance18 mΩ
Rise Time16.8 ns
Schedule B8541290080
Turn-Off Delay Time24 ns
Turn-On Delay Time15.2 ns
Dimensions
Height950 µm
Length5.4 mm
Width6.35 mm