Vishay SIR878DP-T1-GE3

Trans Mosfet N-ch 100V 40A 8-PIN Powerpak So T/r / Mosfet N-ch 100V 40A Ppak SO-8
Obsolete
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데이터시트 및 문서

Vishay SIR878DP-T1-GE3에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet7 페이지7년 전

element14 APAC

Newark

Farnell

대체 부품

이 부품
대체 부품
VishaySIR878DP-T1-GE3
VishaySIR878BDP-T1-RE3
Price @ 1000
$ 0.844
Stock
96,780
574,795
Authorized Distributors
1
6
Mount
Surface Mount
-
Case/Package
-
-
Drain to Source Voltage (Vdss)
100 V
-
Continuous Drain Current (ID)
40 A
42.5 A
Threshold Voltage
1.2 V
-
Rds On Max
14 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
5 W
-
Input Capacitance
1.25 nF
-

공급망

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-04-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-09-14
LTD Date2019-03-14

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설명

유통업체에서 제공한 Vishay SIR878DP-T1-GE3에 대한 설명입니다.

Trans MOSFET N-CH 100V 40A 8-Pin PowerPAK SO T/R / MOSFET N-CH 100V 40A PPAK SO-8
Win Source
Power Field-Effect Transistor, 40A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
MOSFET 100 Volts 40 Amps 44.5 Watts
Best Source
MOSFET N-CH 400V 170MA TO243AA
YIC International
MOSFET,N CH,DIODE,100V,40A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):11400µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13.3A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
element14 APAC

이미지

Farnell
Farnell
Newark

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