MOSFET Transistor; Transistor Polarity: N; MOSFET Transistor; Transistor Polarity: N Channel; Drain Source Voltage Vds: 600V; Continuous Drain Current Id: 22A; On Resistance Rds(on): 0.14ohm; Transistor Mounting: Through Hole; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.