대체 부품
Price @ 1000
$ 1.655
$ 1.213
Stock
1,646,172
462,198
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
17 A
18 A
Threshold Voltage
3 V
-
Rds On Max
190 mΩ
190 mΩ
Gate to Source Voltage (Vgs)
30 V
25 V
Power Dissipation
30 W
30 W
Input Capacitance
1.4 nF
1.06 nF
관련 부품
STMicroelectronicsSTF23NM50N
STF23NM50N N-channel MOSFET Transistor, 17 A, 500 V, 3-Pin TO-220FP
STMicroelectronicsSTF18NM60N
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP
VishaySIHF18N50D-E3
MOSFET, N-CH, 500V, 18A, TO-220FP; Transistor Polarity:N Channel; Continuous Dra
onsemiFCPF190N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F
STMicroelectronicsSTF19NM50N
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220FP
설명
유통업체에서 제공한 STMicroelectronics STF24NM60N에 대한 설명입니다.
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP
MOSFET N-CH 600V 17A TO-220FP / Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220FP Tube
STF24NM60N N-CHANNEL MOSFET TRANSISTOR, 17 A, 650 V, 3-PIN TO-220FP
MOSFET, N CH, 650V, 17A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.168ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.4 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max190 mΩ
Resistance190 MΩ
Rise Time16.5 ns
Threshold Voltage3 V
Turn-Off Delay Time73 ns
Turn-On Delay Time11.5 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm