Infineon IPAW60R190CEXKSA1

In a Tube of 450, N-Channel MOSFET, 26.7 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPAW60R190CEXKSA1

Trans MOSFET N-CH 650V 26.7A 3-Pin TO-220FP Tube

Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS

Power Field-Effect Transistor, 26.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Mosfet, N-Ch, 600V, 26.7A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:26.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPAW60R190CEXKSA1

Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power