공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-21
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
VishaySIHF18N50D-E3
MOSFET, N-CH, 500V, 18A, TO-220FP; Transistor Polarity:N Channel; Continuous Dra
STMicroelectronicsSTF18NM60N
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP
STMicroelectronicsSTP15NK50ZFP
Mosfet Transistor, N Channel, 14 A, 500 V, 340 Mohm, 10 V, 3.75 V Rohs Compliant: Yes
STMicroelectronicsSTF24NM60N
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP
onsemiFCPF260N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220F
설명
유통업체에서 제공한 onsemi FDPF17N60NT에 대한 설명입니다.
N-Channel Power MOSFET, UniFETTM II, 600 V, 17 A, 340 mΩ, TO-220F
Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET,N CH,600V,17A,TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:62.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts..
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance340 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time62 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.04 nF
Max Operating Temperature150 °C
Max Power Dissipation62.5 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation62.5 W
Rds On Max340 mΩ
Rise Time79 ns
Threshold Voltage3 V
Turn-Off Delay Time128 ns
Turn-On Delay Time48 ns
Dimensions
Height16.07 mm
Length10.36 mm
Width4.9 mm