가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RFMW | MRFE6VP6300HR3 | 0 | 1 | 9h | ||||||||
| Farnell | MRFE6VP6300HR3 | 0 | 1 | Cut Tape | 9h | |||||||
| Worldway Electronics | MRFE6VP6300HR3 | 4,210 | 7 | Tape & Reel | 7h | |||||||
| IC Components Ltd. | MRFE6VP6300HR3 | 4,299 | 1d | |||||||||
| Aztech | MRFE6VP6300HR3 | 675 | 3h |
대체 부품
Price @ 1000
$ 174.81
Stock
103,870
109,329
Authorized Distributors
2
6
Mount
Screw, Surface Mount
Screw, Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
130 V
130 V
Continuous Drain Current (ID)
-
100 mA
Threshold Voltage
-
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
10 V
10 V
Power Dissipation
1.05 kW
1.05 kW
Input Capacitance
-
-
관련 부품
NXP SemiconductorsMRFE6VP5600HR5
RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
NXP SemiconductorsMRFE6VP5600HR6
RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
NXP SemiconductorsMRFE6VP5600HSR5
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
VishayIRLR110PBF
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
설명
유통업체에서 제공한 NXP Semiconductors MRFE6VP6300HR3에 대한 설명입니다.
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF FET, 1.8MHZ-600MHZ, NI-780S; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: -; Power Dissipation Pd: 1.05kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-780S; No. o
제조업체 별칭
NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
기술 사양
Physical
Body MaterialCeramic
MountScrew, Surface Mount
Number of Pins780
Number of Terminals4
Weight6.395794 g
Technical
Drain to Source Breakdown Voltage130 V
Drain to Source Voltage (Vdss)130 V
Element ConfigurationSingle
Frequency230 MHz
Gain26.5 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency600 MHz
Max Operating Temperature225 °C
Max Power Dissipation1.05 kW
Min Breakdown Voltage130 V
Min Operating Temperature-30 °C
Number of Elements2
Output Power300 W
Power Dissipation1.05 kW
Schedule B8541290080
Test Current100 mA
Test Voltage50 V
Voltage Rating130 V