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이 부품
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Price @ 1000
$ 0.432
$ 0.331
Stock
56,524
35,538
Authorized Distributors
6
5
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
4.3 A
4.3 A
Threshold Voltage
2 V
-
Rds On Max
540 mΩ
540 mΩ
Gate to Source Voltage (Vgs)
10 V
10 V
Power Dissipation
25 W
2.5 W
Input Capacitance
250 pF
250 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
VishayIRFR110PBF
Transistor: N-MOSFET; unipolar; 100V; 4.3A; 0.54ohm; 25W; -55+150 deg.C; SMD; TO252(DPAK)
설명
유통업체에서 제공한 Vishay IRLR110PBF에 대한 설명입니다.
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
Power MOSFET Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N CHANNEL MOSFET, 100V, 4.3A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: No
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
제조업체 별칭
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기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)4.3 A
Current Rating4.3 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance540 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance250 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation25 W
Rds On Max540 mΩ
Resistance540 MΩ
Rise Time47 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time16 ns
Turn-On Delay Time9.3 ns
Voltage Rating (DC)100 V
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm