NXP Semiconductors MRFE6VP5600HR5

RF Power Transistor, 1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
$ 212.395
EOL
제조업체 페이지데이터시트

가격 및 재고

모든 가격 할인 보기
DistributorSKUMinPkg
DigiKey
3
MRFE6VP5600HR5CT-ND1001Cut Tape
Newark
2
MRFE6VP5600HR5050Cut Tape
RFMWMRFE6VP5600HR501
1d
AvnetMRFE6VP5600HR5050
1d
Future Electronics
2
MRFE6VP5600HR5050Tape & Reel

데이터시트 및 문서

NXP Semiconductors MRFE6VP5600HR5에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet13 페이지15년 전

Future Electronics

Freescale Semiconductor

재고 내역

3개월간의 트렌드:
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공급망

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2010-12-14
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
LTB Date2026-09-30
LTD Date2027-09-30

관련 부품

NXP SemiconductorsMRFE6VP6300HR5
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
세부 사항
NXP SemiconductorsMRFE6VP6300HR3
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
세부 사항
NXP SemiconductorsMRFE6VP6300HSR3
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
세부 사항
VishayIRLL110TRPBF
IRLL110TRPBF N-CHANNEL MOSFET TRANSISTOR, 1.5 A, 100 V, 3 + TAB-PIN SOT-223
세부 사항
VishayIRLR110PBF
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
세부 사항
VishayIRLR110TRPBF
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
세부 사항

설명

유통업체에서 제공한 NXP Semiconductors MRFE6VP5600HR5에 대한 설명입니다.

RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
RFMW
Tape & Reel (TR) N-CHANNEL COMMON SOURCE 2ELEMENTS EAR99 RF Mosfet 100mA 600W 25dB 230MHz
Fly-Wing Technology
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V, CFM4F, RoHS
NXP Semiconductors SCT
MRFE6VPx Series 130 V 230 MHz RF Power Field Effect Transistor - NI-1230
Future Electronics
FET RF 2CH 130V 230MHZ NI1230 / Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
Win Source
Transistor RF FET N-CH 130V 1.8MHz to 600MHz 4-Pin NI-1230 T/R
Avnet Japan
FET RF 2N-CH 230MHZ 50V NI1230
DigiKey
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
IHS
TRANSISTOR, RF, 130V, NI-1230-4; Drain Source Voltage Vds: 130VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.667kW; Operating Frequency Min: 1.8MHz; O; Available until stocks are exhausted Alternative available
Farnell

이미지

NXP Semiconductors
Farnell
Newark
RFMW
LZChips

제조업체 별칭

NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:

  • NXP
  • PHILIPS
  • PHIL
  • NXP USA Inc
  • PHI
  • PHILLIPS
  • NXP SEMI
  • NXP SEMICONDUCTOR
  • PHILIPS/NXP
  • PHILIPS SEMICONDUCTORS
  • PHILIP
  • NXP/PHILIPS
  • PHILIPS SEMICONDUCTOR
  • PHILPS
  • PHILIPS COMPONENTS
  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • NXP / Freescale
  • PHILL
  • PHILIPS ECG
  • Philips Semiconducto
  • PHILLIP
  • PHILI
  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP