공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1991-03-05
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2015-06-30
LTD Date2015-12-31
관련 부품
InfineonIRLML6401TRPBF
Transistor: P-MOSFET; unipolar; -12V; -4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
설명
유통업체에서 제공한 NXP Semiconductors BF998에 대한 설명입니다.
Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143B
RF MOSFET MOSFET (Metal Oxide) 12V 1GHz 10mA SOT143 T/R
2 CHANNEL UHF BAND Si N-CHANNEL RF SMALL SIGNAL MOSFET
RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
MOSFET, N, RF, DUAL-GATE, SOT-143B; Drain Source Voltage Vds: 12V; Continuous Drain Current Id: 30mA; Power Dissipation Pd: 200mW; Operating Frequency Min: -; Operating Frequency Max: -; RF Transistor Case: SOT-143B; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Application Code: Dual-Gate (HF) MOSFET; Current Idss Max: 18mA; Current Idss Min: 2mA; Full Power Rating Temperature: 25°C; Gfs Min: 21mA/V; No. of Transistors: 1; Noise Figure Typ: 1dB; Power Dissipation Max: 200mW; Power Dissipation Ptot Max: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-143B; Transistor Polarity: N Channel; Transistor Type: RF MOSFET; Voltage Vds Typ: 12V
MOSFET, N, RF, DUAL-GATE, SOT-143; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:12V; Current, Id Cont:30mA; Case Style:SOT-143; Termination Type:SMD; Application Code:Dual-Gate (HF) MOSFET; Current, Idss Max:18mA; ;RoHS Compliant: Yes
제조업체 별칭
NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)30 mA
Drain to Source Voltage (Vdss)12 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)6 V
Input Capacitance1.2 pF
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Breakdown Voltage12 V
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
Dimensions
Height1 mm
Length3 mm
Width1.4 mm