This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
MOSFET, P CH, -12V, -2.6A, SUPERSOT; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.6A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -