관련 부품
Rochester ElectronicsBF2040RE6814
Power Field-Effect Transistor, 0.04A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonBF2030E6814
RF Small Signal Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon BF1009SRE6327에 대한 설명입니다.
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Trans RF MOSFET N-CH 12V 0.025A Automotive 4-Pin(3+Tab) SOT-143R T/R / MOSFET N-CH 12V 25MA SOT-143R
22 dB Compliant Surface Mount 1.3 mm 1 mm 2.9 mm 800 MHz Lead Free
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- Infineon Technologies
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- INFINEO
- INFINE
- INFIN
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- INFENION
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- INFIEON
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- INFINEON TECHNOLOGIE
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- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-143
MountSurface Mount
Number of Pins4
Technical
Continuous Drain Current (ID)25 mA
Current Rating25 mA
Drain to Source Voltage (Vdss)12 V
Frequency800 MHz
Gain22 dB
Input Capacitance2.5 pF
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Noise Figure1.4 dB
PackagingTape & Reel (TR)
Test Voltage9 V
Voltage Rating12 V
Voltage Rating (DC)12 V
Dimensions
Height1 mm
Length2.9 mm
Width1.3 mm