대체 부품
Price @ 1000
$ 1.27
$ 1.27
Stock
1,297,841
1,297,841
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220
Drain to Source Voltage (Vdss)
800 V
800 V
Continuous Drain Current (ID)
11 A
11 A
Threshold Voltage
-
-
Rds On Max
450 mΩ
450 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
156 W
156 W
Input Capacitance
1.6 nF
1.6 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-11-07
Lifecycle StatusNRND (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTP15N80K5
N-channel 800 V, 0.3 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-220 package
STMicroelectronicsSTP13N80K5
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package
설명
유통업체에서 제공한 Infineon SPP11N80C3XKSA1에 대한 설명입니다.
Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220, Through Hole
COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, COOLMOS, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Diss
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)800 V
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.6 nF
Max Dual Supply Voltage800 V
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance450 mΩ
Package Quantity500
Power Dissipation156 W
Rds On Max450 mΩ
Rise Time15 ns
Schedule B8541290080
Turn-Off Delay Time72 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)800 V