대체 부품
Price @ 1000
$ 1.246
$ 1.669
$ 1.669
Stock
1,253,745
207,111
207,111
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-220
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
600 V
600 V
600 V
Continuous Drain Current (ID)
11 A
11 A
11 A
Threshold Voltage
-
5 V
5 V
Rds On Max
380 mΩ
380 mΩ
380 mΩ
Gate to Source Voltage (Vgs)
20 V
30 V
30 V
Power Dissipation
125 W
125 W
125 W
Input Capacitance
1.2 nF
1.49 nF
1.49 nF
관련 부품
STMicroelectronicsSTP15NM60ND
N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220 package
STMicroelectronicsSTP18NM60N
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220
STMicroelectronicsSTP15NM65N
N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220 package
설명
유통업체에서 제공한 Infineon SPP11N60C3XKSA1에 대한 설명입니다.
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Variants: Enhancement mode Power dissipation: 125 W
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 650V, 11A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.38Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Msl:- Rohs Compliant: Yes
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance380 mΩ
Package Quantity500
Power Dissipation125 W
Rds On Max380 mΩ
Rise Time5 ns
Schedule B8541290080
Turn-Off Delay Time44 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)650 V
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책