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설명
유통업체에서 제공한 Infineon SPP11N65C3XKSA1에 대한 설명입니다.
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 650V, 11A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
Replacement for 650V CoolMOS C3 is 650V CoolMOS C6/E6 >> Click & go to 650V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance400 mΩ
Package Quantity500
Power Dissipation125 W
Rds On Max380 mΩ
Rise Time5 ns
Turn-Off Delay Time44 ns
Turn-On Delay Time10 ns
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책