공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-02-19
Lifecycle StatusNRND (Last Updated: 3 months ago)
설명
유통업체에서 제공한 Infineon SPD09P06PLGBTMA1에 대한 설명입니다.
Single P-Channel 60 V 250 mOhm 14 nC SIPMOS® Power Mosfet - DPAK
Power Field-Effect Transistor, 9.7A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB
MOSFET, P-CH, -60V, -9.7A, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)9.7 A
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)-60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance360 pF
Max Dual Supply Voltage-60 V
Max Operating Temperature175 °C
Max Power Dissipation42 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance250 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation42 W
Schedule B8541290080
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeNot Halogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책