가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IPD090N03LGATMA1 | 2,087 | 5 | Cut Tape | ||||||||
| Arrow Electronics | IPD090N03LGATMA1 | 24 | 1 | |||||||||
| Future Electronics | IPD090N03LGATMA1 | 37,500 | 2500 | Tape & Reel | ||||||||
| DigiKey | IPD090N03LGATMA1CT-ND | 93,617 | 1 | Cut Tape | ||||||||
| Avnet | IPD090N03LGATMA1 | 0 | 2500 | 1d |
공급망
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-23
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIPD040N03LGATMA1
79W(Tc) 20V 2.2V@ 250¦ÌA 38nC@ 10 V 1N 30V 4m¦¸@ 30A,10V 90A 3.9nF@15V TO-252
Diodes Inc.DMG4511SK4-13
Mosfet, Dual, N/P-Ch, 35V, 5.3A Rohs Compliant: Yes |Diodes Inc. DMG4511SK4-13
설명
유통업체에서 제공한 Infineon IPD090N03LGATMA1에 대한 설명입니다.
N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11
MOSFET, N CH, 40A, 30V, PG-TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V;
Mosfet, N Channel, 30V, 40A, To-252; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:40A; Tensión Drenaje-Fuente Vds:30V; Resistencia De Activación Rds(On):0.0075Ohm; Tensión Vgs De Medición Rds(On):10V |Infineon IPD090N03L G
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42
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기술 사양
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Operating Temperature175 °C
Max Power Dissipation42 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance9 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation42 W
Rds On Max9 mΩ
Rise Time3 ns
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time4 ns