공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-12-08
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIPD040N03LGATMA1
N-Channel 30 V 90 A 4 mOhm Surface Mount OptiMOS Power-Transistor - PG-TO252-3
설명
유통업체에서 제공한 onsemi FDD4243에 대한 설명입니다.
P-Channel owerTrench® MOSFET, -40V, -14A, 44mΩ
P-Channel 40 V 44 mOhm Surface Mount PowerTrench Mosfet TO-252-3
Trans MOSFET P-CH Si 40V 6.7A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 6.7A DPAK
Power Field-Effect Transistor, 6.7A I(D), 40V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-40V; Continuous Drain Current, Id:-6.7A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-1.6V ;RoHS Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -14 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 44 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 42
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- SCG
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- ON SEMICO
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기술 사양
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)6.7 A
Current Rating-14 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance64 mΩ
Drain to Source Voltage (Vdss)-40 V
Dual Supply Voltage-40 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.55 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs-1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation42 W
Rds On Max44 mΩ
Resistance44 MΩ
Rise Time15 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1.6 V
Turn-Off Delay Time22 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)-40 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm