가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLML2502TRPBF | 189,000 | 3K | 2d | ||||||||
| Future Electronics | IRLML2502TRPBF | 444,000 | 3K | Tape & Reel | ||||||||
| Arrow Electronics | IRLML2502TRPBF | 5 | 1 | |||||||||
| Rochester Electronics | IRLML2502TRPBF | 50 | 20h | |||||||||
| Newark | IRLML2502TRPBF | 0 | 6K | Tape & Reel |
대체 부품
Price @ 1000
$ 0.119
$ 0.126
Stock
15,725,450
207,162
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
4.2 A
4.2 A
Threshold Voltage
1.2 V
1.2 V
Rds On Max
45 mΩ
-
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
1.25 W
1.25 W
Input Capacitance
740 pF
740 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusEOL (Last Updated: 4 months ago)
관련 부품
Diodes Inc.DMP2066LSN-7
Mosfet, P-Ch, 20V, 4.6A, Sc-59 Rohs Compliant: Yes |Diodes Inc. DMP2066LSN-7
InfineonIRLML6402TRPBF
Transistor: P-MOSFET; unipolar; -20V; -2.3A; 0.065ohm; 1.3W; -55+150 deg.C; SMD; SOT23
InfineonIRLML6402GTRPBF
Single P-Channel 20 V 1.3 W 8.0 nC Hexfet Power Mosfet Surface Mount - SOT-23
설명
유통업체에서 제공한 Infineon IRLML2502TRPBF에 대한 설명입니다.
Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.035Ohm;ID 4.2A;Micro3;PD 1.25W;VGS +/-12V
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 20 V, 4.2 A, 0.045 ohm, SOT-23, Surface Mount
Trans MOSFET N-CH Si 20V 4.2A 3-Pin SOT-23 T/R / HEXFET Power MOSFET
HEXFET Power MOSFET Small Signal Field-Effect Transistor
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N, MICRO3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.2A; Package / Case:Micro3; Power Dissipation Pd:1.25W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.2V; Voltage Vgs Rds on Measurement:4.5V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:4.2A; Resistance, Rds On:0.045ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.2V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:33A; Current, Idss Max:1.0µA; External Depth:2.5mm; External Length / Height:1.12mm; N-channel Gate Charge:12nC; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; SMD Marking:1G; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Fall:26s; Time, Rise:10ns; Time, trr Typ:16ns; Transistors, No. of:1; Typ Capacitance Ciss:740pF; Typ Charge Qrr @ Tj = 25°C:8.6nC; Voltage, Vds Max:20V; Voltage, Vgs th Max:1.2V; Voltage, Vgs th Min:0.6V; Width, External:3.05mm; Width, Tape:8mm
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.2 A
Current Rating4.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance740 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Manufacturer Package IdentifierMicro3™
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Elements1
On-State Resistance45 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max45 mΩ
Resistance45 mΩ
Rise Time10 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.2 V
Turn-Off Delay Time54 ns
Turn-On Delay Time7.5 ns
Voltage Rating (DC)20 V
Dimensions
Height1.016 mm
Length2.794 mm