공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-24
Lifecycle StatusEOL (Last Updated: 4 months ago)
관련 부품
InfineonIRLML6402TRPBF
Transistor: P-MOSFET; unipolar; -20V; -2.3A; 0.065ohm; 1.3W; -55+150 deg.C; SMD; SOT23
InfineonIRLML2502TRPBF
Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
InfineonIRLML6402GTRPBF
Single P-Channel 20 V 1.3 W 8.0 nC Hexfet Power Mosfet Surface Mount - SOT-23
Diodes Inc.DMP2066LSN-7
Mosfet, P-Ch, 20V, 4.6A, Sc-59 Rohs Compliant: Yes |Diodes Inc. DMP2066LSN-7
설명
유통업체에서 제공한 Infineon IRLML2244TRPBF에 대한 설명입니다.
Single P-Channel 20 V 54 mOhm 6.9 nC HEXFET® Power Mosfet - SOT-23
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Power MOSFET, P Channel, 20 V, 4.3 A, 0.042 ohm, SOT-23, Surface Mount
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V Rohs Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -4.3 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 95 / Gate-Source Voltage V = 12 / Fall Time ns = 25 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3
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- Infineon Technologies
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- INFINEON TECHNOLOGIE
- NFINEON
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기술 사양
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance54 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance570 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-1.1 V
Number of Elements1
On-State Resistance54 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max54 mΩ
Recovery Time32 ns
Resistance95 MΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage-1.1 V
Turn-Off Delay Time34 ns
Turn-On Delay Time7 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm