관련 부품
Diodes Inc.ZXMN2F30FHTA
ZXMN2F30FH Series N-Channel 20 V 0.045 Ohm Power MOSFET Surface Mount - SOT-23-3
onsemiNTR4501NT3G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 3.2A Ta 3.2A 1.25W 12ns
Diodes Inc.ZXMN2F34FHTA
Power MOSFET, Low Voltage, N Channel, 20 V, 4 A, 0.06 ohm, SOT-23, Surface Mount
설명
유통업체에서 제공한 Infineon IRLML2502PBF에 대한 설명입니다.
MOSFET N-Channel 20V 4.2A SOT23
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:4.2A; On Resistance, Rds(on):0.045ohm; Package/Case:SOT-23; Termination Type:SMD; Power Dissipation, Pd:1.25W; Current, Idm pulse:33A ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 12 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 45 / Gate-Source Voltage V = 12 / Fall Time ns = 26 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 54 / Turn-ON Delay Time ns = 7.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.25
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Capacitance Ciss Typ:740pF; Charge Qrr @ Tj = 25°C Typ:8.6nC; Current Id Max:4.2A; Current Idss Max:1µA; Current Temperature:25°C; Device Marking:IRLML2502PBF; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Fall Time tf:26s; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:12nC; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:1.25W; Power Dissipation Pd:1.25W; Pulse Current Idm:33A; Reverse Recovery Time trr Typ:16ns; Rise Time:10ns; SMD Marking:1G; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.2V; Voltage Vgs th Max:1.2V
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기술 사양
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)12 V
Input Capacitance740 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.25 W
Recovery Time24 ns
Reverse Recovery Time16 ns
Rise Time10 ns
Threshold Voltage1.2 V
Turn-Off Delay Time54 ns
Turn-On Delay Time7.5 ns
Dimensions
Height1.12 mm
Length3.04 mm
Width3.05 mm