Infineon IRLH5030TRPBF

INFINEON IRLH5030TRPBF MOSFET Transistor, N Channel, 100 A, 100 V, 0.0072 ohm, 10 V, 2.5 V

Single N-Channel 100 V 9.9 mOhm 44 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

MOSFET, N-Channel, 100V, 100A, 9.0 mOhm max, 44 nC Qg, PQFN, Logic Level

100V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PG-TDSON-8, RoHS

Power MOSFET, N Channel, 100 V, 100 A, 0.009 ohm, QFN, Surface Mount

Trans MOSFET N-CH 100V 13A 8-Pin PQFN EP T/R

MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:3.6W;RoHS Compliant: Yes

MOSFET,N CH,100V,100A,PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:3.6W; Voltage Vgs Max:16V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 88 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 9.9 / Gate-Source Voltage V = 16 / Fall Time ns = 41 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 21 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.6