가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH5210TR2PBF | 0 | 800 | Bulk | 16h | |||||||
| Avnet | IRFH5210TR2PBF | 0 | 800 | 2d | ||||||||
| Farnell | IRFH5210TR2PBF | 0 | 1 | Cut Tape | 23h | |||||||
| Microchip USA | IRFH5210TR2PBF | 125 | 150 | Tray | 17h | |||||||
| Component Stockers USA | IRFH5210TR2PBF | 18,365 | 3d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-04-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIRFH5110TRPBF
Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
InfineonIRFH7110TRPBF
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6 package, PG-TDSON-8, RoHS
설명
유통업체에서 제공한 Infineon IRFH5210TR2PBF에 대한 설명입니다.
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
MOSFET, 100V, 55A, 14.9 mOhm, 39 nC Qg, PQFN 5x6
Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0126ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes
MOSFET,N CH,100V,55A,PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Power Dissipation Pd:3.6W; Voltage Vgs Max:20V
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance14.9 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time6.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.57 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation3.6 W
Rds On Max14.9 mΩ
Recovery Time44 ns
Resistance14.9 MΩ
Rise Time9.7 ns
Threshold Voltage2 V
Turn-Off Delay Time21 ns
Turn-On Delay Time7.2 ns
Dimensions
Height900 µm
Length5.9944 mm
Width5 mm