Infineon IRFZ44ZSPBF

Name: Infineon IRFZ44ZSPBF
Brand: Infineon
SKU: IRFZ44ZSPBF

Hexfet® Power Mosfet ( Vdss = 55V , Rds(on) = 13.9MΩ , Id = 51A ) | Mosfet N-ch 55V 51A D2PAK

$ 1.46

Obsolete

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모든 가격 할인 보기

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFZ44ZSPBF	0	5	Bulk		1.660	1.460	1.460	1.460	12h
Farnell	IRFZ44ZSPBF	0	1		0.940*	0.940*	0.940*	0.940*	0.940*	20h
Win Source	WS-IRFZ44ZSPBF	20	20				2.046	1.716	1.716	21h
Worldway Electronics	IRFZ44ZSPBF	16,941	7	Tube		0.513	0.497	0.471	0.471	20h
Chipsmall Limited	IRFZ44ZSPBF	600,000	1		0.849	0.566	0.340	0.283	0.283	4h

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

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데이터시트 및 문서

Infineon IRFZ44ZSPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet13 페이지15년 전

Datasheet12 페이지15년 전

Newark

Factory Futures

iiiC

DigiKey

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InfineonIRFZ44ZSPBF

InfineonIRFZ44ZSTRRPBF

Price @ 1000

$ 1.46

$ 1.132

Stock

631,004

121,515

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

51 A

Threshold Voltage

4 V

Rds On Max

13.9 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

80 W

Input Capacitance

1.42 nF

공급망

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-10-08

Lifecycle StatusObsolete (Last Updated: 1 month ago)

LTB Date2018-12-15

LTD Date2019-06-15

설명

유통업체에서 제공한 Infineon IRFZ44ZSPBF에 대한 설명입니다.

HEXFET® Power MOSFET ( VDSS = 55V , RDS(on) = 13.9mΩ , ID = 51A ) | MOSFET N-CH 55V 51A D2PAK

Win Source

Single N-Channel 55 V 13.9 mOhm 29 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 80 W

Distrelec

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

Infineon

Trans MOSFET N-CH 55V 51A 3-Pin(2+Tab) D2PAK

Avnet

HEXFET Power MOSFET Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

MOSFET, N, 55V, 51A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):13.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:80W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:51A; Junction to Case Thermal Resistance A:1.87°C/W; On State resistance @ Vgs = 10V:13.9mohm; Package / Case:D2-PAK; Power Dissipation Pd:80W; Power Dissipation Pd:80W; Pulse Current Idm:200A; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC