대체 부품
Price @ 1000
$ 1.25
$ 4.18
Stock
383,207
102,436
Authorized Distributors
5
2
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
DPAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
57 A
57 A
Threshold Voltage
4 V
2 V
Rds On Max
12 mΩ
12 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
92 W
92 W
Input Capacitance
1.69 nF
1.69 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-08-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
관련 부품
InfineonIRFZ48VSPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 72A;D2Pak;PD 150W;VGS +/-20V
InfineonIRFZ48NSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;D2Pak;PD 130W;VGS +/-20V
STMicroelectronicsSTB60NF06T4
N-Channel 60V - 0.014Ohm - 60A - D2APK StripFET(TM) II POWER MOSFET
InfineonIRFZ44ESPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;D2Pak;PD 110W;VGS +/-20V;-55
STMicroelectronicsSTB60NF06LT4
N-channel 60 V, 0.012 Ohm typ., 60 A STripFET II Power MOSFET in a D2PAK package
STMicroelectronicsSTB55NF06T4
N-Channel 60V - 0.017Ohm - 50A - D2PAK StripFET(TM) II POWER MOSFET
설명
유통업체에서 제공한 Infineon IRFZ44VZSPBF에 대한 설명입니다.
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) | MOSFET N-CH 60V 57A D2PAK
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 60V 57A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 60V, 57A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:92W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:57A; Junction to Case Thermal Resistance A:1.64°C/W; On State resistance @ Vgs = 10V:12mohm; Package / Case:D2-PAK; Power Dissipation Pd:92W; Power Dissipation Pd:92W; Pulse Current Idm:230A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)57 A
Current Rating57 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.69 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation92 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance12 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation92 W
Rds On Max12 mΩ
Resistance12 mΩ
Rise Time62 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time35 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)60 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm